Methods of forming integrated circuit devices having a...

Details Methods of forming integrated circuit devices having a... Methods of forming integrated circuit devices having a...

2006-08-15

2006-08-15

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S239000, C438S396000, C257S297000, C257SE21008

Reexamination Certificate

active

07091102

ABSTRACT:
An integrated circuit device is formed by providing a substrate and forming a capacitor on the substrate. The capacitor includes a lower electrode disposed on the substrate, a dielectric layer on the lower electrode, and an upper electrode on the dielectric. A hydrogen barrier insulation layer is formed on the upper electrode and a hydrogen barrier spacer is formed on a sidewall of the capacitor.

REFERENCES:
patent: 6485988 (2002-11-01), Ma et al.
patent: 6686620 (2004-02-01), An et al.
patent: 6750492 (2004-06-01), Mikawa et al.
patent: 2002-280528 (2002-09-01), None
patent: 10-2001-011157 (2001-02-01), None
patent: 10-2001-0029846 (2001-04-01), None
patent: 10200020013154 (2002-02-01), None
patent: 1020030057673 (2003-07-01), None
patent: WO 98/31053 (1998-04-01), None
Notice to Submit a Response for Korean Patent Application No. 10-2003-004086 mailed on Mar. 31, 2005.
Notice to Submit a Response for Korean Patent Application No. 10-2003-0040086 mailed on Sep. 30, 2005.

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