Methods of forming integrated circuit devices

Details Methods of forming integrated circuit devices Methods of forming integrated circuit devices

2007-02-20

2007-02-20

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S426000, C438S427000

Reexamination Certificate

active

11136823

ABSTRACT:
Forming an integrated circuit device includes forming a hard mask layer overlying a semiconductor substrate. The hard mask layer is patterned to expose portions of the substrate and edges of the hard mask layer. Exposed portions of the substrate are removed. A first portion of the substrate is covered with a photoresist layer while leaving a second portion exposed. The exposed edges of the hard mask are recessed to expose a third portion of the substrate. Recessing the exposed edges of the hard mask includes using at least a dry-etch chemistry. The exposed second and third portions of the substrate are oxidized.

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