Methods of forming integrated circuit capacitors having protecte

Details Methods of forming integrated circuit capacitors having protecte Methods of forming integrated circuit capacitors having protecte

1997-11-13

1999-03-02

Bowers, Charles

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438253, 438650, 438653, 438240, H01L 2120

Patent

active

058770623

ABSTRACT:
Methods of forming integrated circuit capacitors include the steps of forming an electrically insulating layer having a contact hole therein, on a face of a semiconductor substrate and then forming a polysilicon contact plug in the contact hole. A first capacitor electrode is then formed in electrical contact with the polysilicon contact plug. The first capacitor electrode may be formed by etching a composite of a diffusion barrier metal layer containing a nitride material (or silicide material) and a first electrically conductive layer. Alternatively, the first capacitor electrode may be formed by etching the diffusion barrier metal layer without the first electrically conductive layer thereon. The diffusion barrier metal layer inhibits parasitic migration of silicon from the polysilicon plug to the first electrically conductive layer. A protective layer of a preferred material is then electroplated onto an upper surface and on sidewalls of the first capacitor electrode. The protective layer is designed to protect exposed sidewall portions of the barrier metal layer from being oxidized during subsequent process steps. Next, a capacitor dielectric layer is formed on the protective layer, opposite the upper surface of the first capacitor electrode. The capacitor dielectric layer is preferably formed of a high dielectric material such as a material selected from the group consisting of Ta.sub.2 O.sub.5, SrTiO.sub.3, BaTiO.sub.3, SrTiO.sub.3, (Ba, Sr)TiO.sub.3, Pb(Zr, Ti)O.sub.3, SrBi.sub.2 Ta.sub.2 O.sub.9 (SBT), (Pb,La)(Zr, Ti)O.sub.3 and Bi.sub.4 Ti.sub.3 O.sub.12.

REFERENCES:
patent: 4348263 (1982-09-01), Draper et al.
patent: 4466177 (1984-08-01), Chao
patent: 5019535 (1991-05-01), Wojnarowski et al.
patent: 5066615 (1991-11-01), Brady et al.
patent: 5074969 (1991-12-01), Brewer et al.
patent: 5122477 (1992-06-01), Wolters et al.
patent: 5173170 (1992-12-01), Brown et al.
patent: 5464786 (1995-11-01), Figura et al.
patent: 5478772 (1995-12-01), Fazan
patent: 5504041 (1996-04-01), Summerfelt
patent: 5563762 (1996-10-01), Leung et al.
patent: 5696015 (1997-12-01), Hwang
Hiromi Itoh et al., Integration Of BST Thin Film For DRAM Fabrication, Integrated Ferroelectrics, 1995, vol. 11, pp. 101-109, (No Month).

Affiliated with

Also associated with

Rating

Methods of forming integrated circuit capacitors having protecte does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming integrated circuit capacitors having protecte, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming integrated circuit capacitors having protecte will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-422403