Methods of forming integrated circuit capacitors having doped di

Details Methods of forming integrated circuit capacitors having doped di Methods of forming integrated circuit capacitors having doped di

1997-10-09

2000-10-10

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Making passive device

Planar capacitor

438382, 438385, 438394, 438396, H02L 2170

Patent

active

061301388

ABSTRACT:
A method of making a semiconductor device having a thin film resistor, the method comprising the steps of: forming a first polysilicon layer on an upper surface of a field oxide layer formed on a semiconductor substrate; forming a first dielectric layer on a resultant material; ion-implanting an impurity for forming a resistor in the first polysilicon layer through the first dielectric layer; forming a second dielectric layer on an upper surface of the first dielectric layer; selectively etching the first and second dielectric layers and the first polysilicon layer to form a resistor poly (RPOLY) lower electrode; forming a second polysilicon layer on an upper surface of a resultant material; and forming a gate poly (GPOLY) by selectively etching the second polysilicon layer.

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