Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth step with preceding and subsequent diverse...
Patent
1997-08-12
1998-12-22
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth step with preceding and subsequent diverse...
438478, 257 94, 257 96, H01L 29205
Patent
active
058519050
ABSTRACT:
Stacked quantum well light emitting diodes include a plurality of stacked active layers of indium gallium nitride, separated by barrier layers of aluminum gallium nitride or aluminum indium gallium nitride, wherein the ratios of indium to gallium differ in at least two of the stacked active layers. Preferably, the differing ratios of indium to gallium are selected to produce emission wavelengths from the stacked active layers, such that the emission wavelengths are combined to produce white light. Controlled amounts of hydrogen gas are introduced into a reaction chamber during formation of indium gallium nitride or aluminum indium gallium nitride to produce high quality indium gallium nitride or aluminum indium gallium nitride which incorporate large percentages of indium and possesses excellent optical and surface properties.
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Bedair Salah Mohamed
El-Masry Nadia Ahmed
McIntosh Forrest Gregg
Roberts John Claassen
Bowers Jr. Charles L.
Christianson Keith
North Carolina State University
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