Methods of forming hemispherical grained silicon electrodes incl

Details Methods of forming hemispherical grained silicon electrodes incl Methods of forming hemispherical grained silicon electrodes incl

1997-10-15

1998-10-13

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438255, H01L 2120

Patent

active

058211527

ABSTRACT:
A method of forming a hemispherical grained silicon electrode includes the steps of forming an amorphous silicon layer on an integrated circuit substrate, and heating the integrated circuit substrate and the amorphous silicon layer to a first deposition temperature. The amorphous silicon layer is exposed to a source gas including silicon while maintaining the first deposition temperature thereby forming silicon crystal nuclei on a surface of the amorphous silicon layer. The temperature of the integrated circuit substrate is lowered to a second deposition temperature wherein the second deposition temperature is less than the first deposition temperature. The silicon crystal nuclei are exposed to the source gas including silicon while maintaining the second deposition temperature thereby increasing a size of the silicon crystal nuclei. The silicon layer and the silicon crystal nuclei are then annealed thereby further increasing the size of the silicon crystal nuclei to provide hemispherical grains on the silicon layer.

REFERENCES:
patent: 5234862 (1993-08-01), Aketagawa et al.
patent: 5366917 (1994-11-01), Watanabe et al.
patent: 5372962 (1994-12-01), Hirota et al.
patent: 5385863 (1995-01-01), Tatsumi et al.
patent: 5394012 (1995-02-01), Kimura
patent: 5405801 (1995-04-01), Han et al.
patent: 5464791 (1995-11-01), Hirota
patent: 5486488 (1996-01-01), Kamiyama
patent: 5543347 (1996-08-01), Kawano et al.
patent: 5554557 (1996-09-01), Koh
patent: 5567637 (1996-10-01), Hirota
patent: 5590051 (1996-12-01), Yokozawa
patent: 5595937 (1997-01-01), Mikagi
patent: 5616511 (1997-04-01), Hirota
patent: 5623243 (1997-04-01), Watanabe et al.
patent: 5663090 (1997-09-01), Dennison et al.
H. Watanabe et al., A New Cylindrical Capacitor Using Hemispherical Grained Si (HSG-Si) for 256Mb DRAMs, 1992 IEEE, IEDM 92, 10.1.1--10.1.4, pp. 259-262.

Affiliated with

Also associated with

Rating

Methods of forming hemispherical grained silicon electrodes incl does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming hemispherical grained silicon electrodes incl, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming hemispherical grained silicon electrodes incl will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-312886