Methods of forming halo regions in NMOS transistors

Details Methods of forming halo regions in NMOS transistors Methods of forming halo regions in NMOS transistors

2007-01-02

2007-01-02

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S528000, C438S923000, C257SE21337

Reexamination Certificate

active

10998868

ABSTRACT:
Disclosed are methods of forming a halo region in n-channel type MOS (NMOS) transistors. In one example, the method includes forming, on a channel region of a semiconductor substrate, a structure having a gate insulation film pattern and a gate conductive film pattern stacked sequentially; forming an ion implantation buffer film on an exposed surface of the semiconductor substrate and the gate conductive film pattern; performing a first ion implantation process for injecting fluorine ions into the semiconductor substrate; performing a second ion implantation process for implanting p-type halo ions into the semiconductor substrate; performing a third ion implantation process for implanting n-type impurity ions into the semiconductor substrate; and diffusing the p-type halo ions and the n-type impurity ions using a thermal process.

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