Methods of forming hafnium oxide

Details Methods of forming hafnium oxide Methods of forming hafnium oxide

2007-05-15

2007-05-15

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S396000, C438S240000, C438S785000

Reexamination Certificate

active

10928547

ABSTRACT:
The invention includes methods of forming hafnium-containing materials, such as, for example, hafnium oxide. In one aspect, a semiconductor substrate is provided, and first reaction conditions are utilized to form hafnium-containing seed material in a desired crystalline phase and orientation over the substrate. Subsequently, second reaction conditions are utilized to grow second hafnium-containing material over the seed material. The second hafnium-containing material is in a crystalline phase and/or orientation different from the crystalline phase and orientation of the hafnium-containing seed material. The second hafnium-containing material can be, for example, in an amorphous phase. The seed material is then utilized to induce a desired crystalline phase and orientation in the second hafnium-containing material. The invention also includes capacitor constructions utilizing hafnium-containing materials, and circuit assemblies comprising the capacitor constructions.

REFERENCES:
patent: 4490193 (1984-12-01), Ishaq et al.
patent: 5821556 (1998-10-01), Chew et al.
patent: 6537830 (2003-03-01), Arita et al.
patent: 6785120 (2004-08-01), Basceri et al.
Wolf et al, Silicon Processing for the VLSI Era, vol. 1, 1990, p. 1.

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