Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2000-02-29
2001-10-30
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S613000, C438S106000, C438S107000, C438S108000, C438S666000, C258S005000, C258S005000
Reexamination Certificate
active
06309954
ABSTRACT:
TECHNICAL FIELD
This application pertains to methods of forming flip chip bumps and to related flip chip bump constructions.
BACKGROUND OF THE INVENTION
One method of integrated circuit interconnection is called flip chip bonding. Here, bumps of solder or other conductive material are deposited onto conductive pads of a semiconductor wafer or chip. After separation of individual dies from the wafer, the individual dies or chips are turned upside down, and the bumps are properly aligned with a metallization pattern on another substrate. The aligned bumps are then joined to appropriate points on the pattern.
This invention arose out of concerns associated with improving flip chip bump constructions and formation techniques. This invention also arose out of concerns associated with improving circuit interconnections which utilize flip chip bumps and the methods through which such interconnections are formed.
SUMMARY OF THE INVENTION
Methods of forming flip chip bumps and related flip chip bump constructions are described. In one implementation, a bump of conductive material is formed over a substrate. At least a portion of the bump is dipped into a volume of conductive flowable material, with some of the flowable material remaining over the bump. The remaining flowable material over the bump is solidified and includes an outermost surface the entirety of which is outwardly exposed. In another implementation, the outermost surface include an uppermost generally planar surface away from the substrate. The solidified flowable material together with the conductive material of the bump provide a bump assembly having a height which is greater than the height of the original bump. The increased height is achieved without meaningfully increasing a width dimension of the bump proximate the substrate.
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Lee Jr. Granvill D
Micro)n Technology, Inc.
Smith Matthew
Wells, St. John, Roberts, Gregory & Matkin PS
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