Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Recessed oxide by localized oxidation
Reexamination Certificate
2005-12-21
2010-02-02
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Recessed oxide by localized oxidation
C257S211000, C257S758000, C257SE21527, C331S181000
Reexamination Certificate
active
07655536
ABSTRACT:
Word lines of a NAND flash memory array are formed by concentric, rectangular shaped, closed loops that have a width of approximately half the minimum feature size of the patterning process used. The resulting circuits have word lines linked together so that peripheral circuits are shared. Separate erase blocks are established by shield plates.
REFERENCES:
patent: 4185319 (1980-01-01), Stewart et al.
patent: 4651183 (1987-03-01), Lange et al.
patent: 5043940 (1991-08-01), Harari
patent: 5070032 (1991-12-01), Yuan et al.
patent: 5095344 (1992-03-01), Harari
patent: 5172338 (1992-12-01), Mehrotra et al.
patent: 5313421 (1994-05-01), Guterman et al.
patent: 5315541 (1994-05-01), Harari et al.
patent: 5343063 (1994-08-01), Yuan et al.
patent: 5526307 (1996-06-01), Yiu et al.
patent: 5570315 (1996-10-01), Tanaka et al.
patent: 5661053 (1997-08-01), Yuan
patent: 5712179 (1998-01-01), Yuan
patent: 5774397 (1998-06-01), Endoh et al.
patent: 5867429 (1999-02-01), Chen et al.
patent: 6046935 (2000-04-01), Takeuchi et al.
patent: 6058044 (2000-05-01), Sugiura et al.
patent: 6063688 (2000-05-01), Doyle et al.
patent: 6222762 (2001-04-01), Guterman et al.
patent: 6239008 (2001-05-01), Yu et al.
patent: 6239500 (2001-05-01), Sugimachi et al.
patent: 6512262 (2003-01-01), Watanabe
patent: 6512263 (2003-01-01), Yuan et al.
patent: 6522580 (2003-02-01), Chen et al.
patent: 6583009 (2003-06-01), Hui et al.
patent: 6727195 (2004-04-01), Templeton et al.
patent: 6750100 (2004-06-01), Hsu et al.
patent: 6888755 (2005-05-01), Harari
patent: 6893919 (2005-05-01), Chuang et al.
patent: 6925007 (2005-08-01), Harari et al.
patent: 7015106 (2006-03-01), Yoon et al.
patent: 7323948 (2008-01-01), Ding et al.
patent: 7397106 (2008-07-01), Tsai et al.
patent: 7495294 (2009-02-01), Higashitani
patent: 2001/0005330 (2001-06-01), Choi et al.
patent: 2001/0010640 (2001-08-01), Sato
patent: 2002/0008273 (2002-01-01), Kumazaki
patent: 2002/0109194 (2002-08-01), Ishizuka et al.
patent: 2003/0157436 (2003-08-01), Manger et al.
patent: 2005/0057998 (2005-03-01), Lee et al.
patent: 2005/0072999 (2005-04-01), Matamis et al.
patent: 2005/0180186 (2005-08-01), Lutze et al.
patent: 2006/0125024 (2006-06-01), Ishigaki
patent: 2006/0157798 (2006-07-01), Hayashi et al.
patent: 2007/0138535 (2007-06-01), Higashitani
patent: 24 33 803 (1975-02-01), None
patent: 2433803 (1975-02-01), None
PCT/US2006/062188, Invitation to Pay Additional Fees, dated Aug. 27, 2007, 9 pages.
EPO/ISA, “PCT Invitation to Pay Additional Fees”, mailed in corresponding PCT/US 2006/062188 on Aug. 9, 2007, 9 pages.
Response to Office Action dated Jul. 2, 2008, in U.S. Appl. No. 11/316,654.
International Search Report and Written Opinion, International Application No. PCT/US2006/062188.
Office Action mailed Apr. 3, 2008, U.S. Appl. No. 11/316,654.
Notice of Allowance and Fee(s) Due dated Sep. 4, 2008, in U.S. Appl. No. 11/316,654.
Taiwanese Office Action dated May 21, 2009 in Taiwanese Patent No. 095148283.
Coleman W. David
Kim Su C
SanDisk Corporation
Vierra Magen Marcus & DeNiro LLP
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