Methods of forming field effect transistors and field effect tra

Details Methods of forming field effect transistors and field effect tra Methods of forming field effect transistors and field effect tra

1999-03-11

2000-09-19

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257271, 257293, 257363, 257355, H01L 29786, H01L 2949

Patent

active

061216658

ABSTRACT:
Methods of forming field effect transistors and resultant field effect transistor circuitry are described. In one embodiment, a semiconductive substrate includes a field effect transistor having a body. A first resistive element is received by the substrate and connected between the transistor's gate and the body. A second resistive element is received by the substrate and connected between the body and a reference voltage node. The first and second resistive elements form a voltage divider which is configured to selectively change threshold voltages of the field effect transistor with state changes in the gate voltage. In a preferred embodiment, first and second diode assemblies are positioned over the substrate and connected between the gate and body, and the body and a reference voltage node to provide the voltage divider.

REFERENCES:
patent: 4246502 (1981-01-01), Kubinec
patent: 4297721 (1981-10-01), McKenny et al.
patent: 5268323 (1993-12-01), Fischer et al.
patent: 5681778 (1997-10-01), Manning
patent: 5734175 (1998-03-01), Taniguchi
patent: 5744842 (1998-04-01), Ker

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