Methods of forming field effect transistors and field effect...

Details Methods of forming field effect transistors and field effect... Methods of forming field effect transistors and field effect...

2005-10-25

2005-10-25

Kang, Donghee (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S271000, C257S293000, C257S355000, C257S368000, C326S101000, C326S102000, C326S103000, C326S133000, C327S534000

Reexamination Certificate

active

06958519

ABSTRACT:
Methods of forming field effect transistors and resultant field effect transistor circuitry are described. In one embodiment, a semiconductive substrate includes a field effect transistor having a body. A first resistive element is received by the substrate and connected between the transistor's gate and the body. A second resistive element is received by the substrate and connected between the body and a reference voltage node. The first and second resistive elements form a voltage divider which is configured to selectively change threshold voltages of the field effect transistor with state changes in the gate voltage. In a preferred embodiment, first and second diode assemblies are positioned over the substrate and connected between the gate and body, and the body and a reference voltage node to provide the voltage divider.

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