Methods of forming ferroelectric thin films

Details Methods of forming ferroelectric thin films Methods of forming ferroelectric thin films

1990-01-24

1991-08-27

Nguyen, Nam X.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

2041922, 427 38, 2504921, C23C 1434

Patent

active

050430491

ABSTRACT:
A ferroelectric film is deposited that has desired stoichiometric composition by employing one of two methods: One method comprises depositing a ferroelectric film, e.g., PbTiO.sub.3, followed by ion implanting the deposited ferroelectric film with one of the constitutents or elements comprising the film, such as, Pb, Ti or O.sub.2. The other method comprises depositing the film by sputtering employing a sputtering gas medium or atmosphere that includes either O.sub.3 or a gaseous form of Pb, such as Pb(C.sub.2 H.sub.5).sub.4, PbCl.sub.4, and Pb.sub.2 O(OH).sub.2, followed by annealing.

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R. N. Castellano et al., "Ion-Beam Deposition of Thin Films of Ferroelectric Lead Zirconate Titanate (PZT)", Journal of Applied Physics, vol. 50 (6), pp. 4406-4411, Jun., 1979.
R. N. Castellano et al., "Ion-Beam Deposition of Ferroelectric Thin Films Sputtered From Multicomponent Targets", Journal of Vacuum Science Technology, vol. 17 (2), pp. 629-633, Mar./Apr., 1980.

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