Methods of forming ferroelectric capacitors on protruding...

Details Methods of forming ferroelectric capacitors on protruding... Methods of forming ferroelectric capacitors on protruding...

2005-02-22

2005-02-22

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S003000, C438S236000

Reexamination Certificate

active

06858443

ABSTRACT:
Ferroelectric capacitors, etc. are disclosed that include a conductive plug that has a base portion of a first cross-sectional width and a protruding portion that protrudes from the base portion and has a second cross-sectional width that is less than the first cross-sectional width. A conductive layer of the ferroelectric capacitor is on the protruding portion opposite the base portion. Related methods are also disclosed.

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Mizutani et al. (U.S. patent application publication No: U.S. 2002/0014648A1).*
Notice to File a Response/Amendment to the Examination Report for Korean Application No. 2002-17256 (English Translation); dated Feb. 26, 2004.

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