Methods of forming electronic devices by ion implanting

Details Methods of forming electronic devices by ion implanting Methods of forming electronic devices by ion implanting

2011-08-23

2011-08-23

Duda, Kathleen (Department: 1722)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S311000

Reexamination Certificate

active

08003306

ABSTRACT:
A method of forming an electronic device is provided that includes forming a resist layer over a substrate having a first region, a second region, and a third region. The method further includes directing radiation through a reticle, wherein the reticle comprises different radiation zones having significantly different transmission values with respect to each other, and the first region is exposed to a significantly different amount of radiation as compared to the second region. The method also includes removing part of the resist layer to leave a remaining portion such that the second region of the resist layer is significantly thinner than the third region of the resist layer, and then ion implanting the substrate while the remaining portion of the resist layer overlies the substrate to form a first implant region and a second implant region having different depths.

REFERENCES:
patent: 4231811 (1980-11-01), Somekh et al.
patent: 2006/0210886 (2006-09-01), Mizuyama et al.
Fu, Yiming et al., “Implant Layers: Leading-edge Noncritical Lithography,” http://solidstate.articles. printthis.clickability.com/pt/cpt?action=Implant+layers . . . , Microlithography World, Nov. 2002, 7 pgs.

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