Methods of forming electromigration and thermal gradient...

Details Methods of forming electromigration and thermal gradient... Methods of forming electromigration and thermal gradient...

2005-05-20

2010-02-16

Nguyen, Cuong Q (Department: 2811)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to nonconductive state

C438S281000, C438S215000, C438S333000, C438S467000, C438S601000

Reexamination Certificate

active

07662674

ABSTRACT:
Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a metallic fuse structure by forming at least one via on a first interconnect structure, lining the at least one via with a barrier layer, and then forming a second interconnect structure on the at least one via.

REFERENCES:
patent: 6111301 (2000-08-01), Stamper
patent: 7298639 (2007-11-01), Hsu et al.
patent: 2004/0262768 (2004-12-01), Cho et al.
patent: 2005/0001241 (2005-01-01), Doyle

Affiliated with

Also associated with

Rating

Methods of forming electromigration and thermal gradient... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming electromigration and thermal gradient..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming electromigration and thermal gradient... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4230342