Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Patent
1996-03-26
1998-09-22
Niebling, John
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
438 47, 438604, 20419235, H01L 2128
Patent
active
058113193
ABSTRACT:
A surface of a compound semiconductor having at least gallium (Ga) and nitride (N) forms a target for sputtering with inert gas, so that oxide and other attachments are removed therefrom. The sputtering the surface is carried out until a disruption layer is formed which has atomically disordered and bumpy arrangement. Following the sputtering process, metal deposition by sputtering and alloying are carried out under vacuum in the same chamber used for the sputtering processes. As a result, the contact resistance between the surface layer and the deposited electrode layer is decreased.
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Ishikawa Hidenori
Koike Masayoshi
Murakami Masanori
Nagai Seiji
Tsukui Katsuyuki
Bilodeau Thomas G.
Niebling John
Toyoda Gosei Co,., Ltd.
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