Methods of forming dielectric structures and capacitors

Details Methods of forming dielectric structures and capacitors Methods of forming dielectric structures and capacitors

2005-02-17

2008-09-16

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S763000, C438S785000

Reexamination Certificate

active

07425493

ABSTRACT:
A capacitor including a dielectric structure, a lower electrode may be formed on a substrate. The dielectric structure may be formed on the lower electrode, and may include a first thin film, which may improve a morphology of the dielectric structure, and a second thin film, which may have at least one of an EOT larger than that of the first thin film and a dielectric constant higher than that of the first thin film. An upper electrode may be formed on the dielectric structure, and the dielectric structure may have an improved morphology and/or a higher dielectric constant.

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Korean Office Action dated May 11, 2005.

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