Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-05-08
2007-05-08
Fourson, George R. (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S256000, C438S242000, C438S630000, C438S637000, C438S642000, C438S649000, C438S655000, C438S721000, C439S917000
Reexamination Certificate
active
11131994
ABSTRACT:
The invention includes methods of forming devices associated with semiconductor constructions. In exemplary methods, common processing steps are utilized to form fully silicided recessed array access gates and partially silicided periphery transistor gates.
REFERENCES:
patent: 2003/0011032 (2003-01-01), Umebayashi
patent: 2004/0092070 (2004-05-01), Hsu et al.
patent: 2004/0108527 (2004-06-01), Taniguchi et al.
patent: 2005/0014338 (2005-01-01), Kim et al.
patent: 2005/0042822 (2005-02-01), Yoshida et al.
patent: 2005/0151180 (2005-07-01), Chiang
patent: 2006/0046398 (2006-03-01), MdDaniel et al.
Figura Thomas Arthur
Haller Gordon A.
Iyer Ravi
Nejad Hasan
Fourson George R.
Garcia Joannie Adelle
Micro)n Technology, Inc.
Wells St. John P.S.
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