Methods of forming conductive through-wafer vias

Details Methods of forming conductive through-wafer vias Methods of forming conductive through-wafer vias

2005-08-30

2005-08-30

Nguyen, Ha Tran (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S675000, C438S678000, C438S686000, C438S687000

Reexamination Certificate

active

06936536

ABSTRACT:
The present invention is generally directed to various methods of forming conductive through-wafer vias. In one illustrative embodiment, the method comprises providing a layer of semiconducting material, forming a layer of metal on a first side of the layer of semiconducting material, forming an opening in the layer of semiconducting material to thereby expose a portion of the layer of metal, the opening extending from at least a second side of the layer of semiconducting material to the layer of metal, and performing a deposition process to form a conductive contact in the opening using the exposed portion of the metal layer as a seed layer. In another illustrative embodiment, the method comprises providing a layer of semiconducting material, forming a first layer of insulating material on a first side of the layer of semiconducting material, forming a layer of metal on the first layer of insulating material, forming an opening in the layer of semiconducting material and the first layer of insulating material to thereby expose a portion of the layer of metal, the opening extending from at least a second side of the layer of semiconducting material to the layer of metal, and performing a deposition process to form a conductive contact in at least the opening using the exposed portion of the metal layer as a seed layer.

REFERENCES:
patent: 5024966 (1991-06-01), Dietrich et al.
patent: 5998292 (1999-12-01), Black et al.
patent: 6359328 (2002-03-01), Dubin

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