Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-07-17
2007-07-17
Sarkar, Asok Kumar (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21508, C438S613000
Reexamination Certificate
active
10879411
ABSTRACT:
Methods may be provided for forming an electronic device including a substrate, a conductive pad on the substrate, and an insulating layer on the substrate wherein the insulating layer has a via hole therein exposing a portion of the conductive pad. In particular, a conductive structure may be formed on the insulating layer and on the exposed portion of the conductive pad. The conductive structure may include a base layer of titanium-tungsten (TiW) and a conduction layer of at least one of aluminum and/or copper. Moreover, the base layer of the conductive structure may be between the conduction layer and the insulating layer. Related devices are also discussed.
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International Search Report and The Written Opinion for PCT/US2004/022949; mailing date: Jan. 25, 2005.
Mis J. Daniels
Zehnder Dean
Myers Bigel & Sibley & Sajovec
Sarkar Asok Kumar
Unitive International Limited
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