Methods of forming conductive features and structures thereof

Details Methods of forming conductive features and structures thereof Methods of forming conductive features and structures thereof

2011-05-24

2011-05-24

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S689000, C438S757000, C438S570000, C438S571000, C438S574000, C438S576000, C438S579000, C438S701000, C438S702000, C438S703000

Reexamination Certificate

active

07947606

ABSTRACT:
Methods of forming features and structures thereof are disclosed. In one embodiment, a method of forming a feature includes forming a first material over a workpiece, forming a first pattern for a lower portion of the feature in the first material, and filling the first pattern with a sacrificial material. A second material is formed over the first material and the sacrificial material, and a second pattern for an upper portion of the feature is formed in the second material. The sacrificial material is removed. The first pattern and the second pattern are filled with a third material.

REFERENCES:
patent: 5662768 (1997-09-01), Rostoker
patent: 6867143 (2005-03-01), Furukawa et al.
patent: 2006/0102959 (2006-05-01), Kim et al.
patent: 2009/0065817 (2009-03-01), Cartier et al.
patent: 2009/0127652 (2009-05-01), Ding et al.
patent: 61-237081 (1986-10-01), None

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