Semiconductor device manufacturing: process – Making regenerative-type switching device – Altering electrical characteristic
Reexamination Certificate
2011-04-12
2011-04-12
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Making regenerative-type switching device
Altering electrical characteristic
C438S308000, C438S622000
Reexamination Certificate
active
07923308
ABSTRACT:
The invention comprises methods of forming a conductive contact to a source/drain region of a field effect transistor, and methods of forming local interconnects. In one implementation, a method of forming a conductive contact to a source/drain region of a field effect transistor includes providing gate dielectric material intermediate a transistor gate and a channel region of a field effect transistor. At least some of the gate dielectric material extends to be received over at least one source/drain region of the field effect transistor. The gate dielectric material received over the one source/drain region is exposed to conditions effective to change it from being electrically insulative to being electrically conductive and in conductive contact with the one source/drain region. Other aspects and implementations are contemplated.
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Basceri Cem
Manning H. Montgomery
Sandhu Gurtej S.
Landau Matthew C
Micro)n Technology, Inc.
Mitchell James M
Wells St. John P.S.
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