Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-03-29
2005-03-29
Smith, Brad (Department: 2824)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S682000, C438S785000
Reexamination Certificate
active
06872660
ABSTRACT:
Methods of forming conductive contacts are described. According to one implementation, the method includes forming a transistor gate structure over a substrate. The gate structure includes a conductive silicide covered by insulative material. A dielectric layer is formed over the substrate and the gate structure. A contact opening is etched into the dielectric layer adjacent the gate structure. After the etching, the substrate is exposed to oxidizing conditions effective to oxidize any conductive silicide within the contact opening which was exposed during the contact opening etch. After the oxidizing, conductive material is formed within the contact opening. According to another embodiment, after the etching, it is determined whether conductive silicide of the gate structure was exposed during the etching. The substrate is then exposed to oxidizing conditions only if conductive silicide of the gate structure was exposed during the etching.
REFERENCES:
patent: 4443930 (1984-04-01), Hwang et al.
patent: 5356834 (1994-10-01), Sugimoto et al.
patent: 5899742 (1999-05-01), Sun
Merriam Webster's Collegiate Dictionary. the 10thedition, pp 811.
Cho Chi-Chen
Trivedi Jigish D.
Wang Zhongze
Micro)n Technology, Inc.
Smith Brad
Wells St. John P.S.
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