Methods of forming cobalt layers for semiconductor devices

Details Methods of forming cobalt layers for semiconductor devices Methods of forming cobalt layers for semiconductor devices

2007-05-01

2007-05-01

Sarkar, Asok K. (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S687000, C438S618000, C438S620000, C257SE51001

Reexamination Certificate

active

10881231

ABSTRACT:
The present invention provides methods of forming cobalt layers on a structure comprising forming a preliminary cobalt layer on a semiconductor substrate by introducing an organic metal precursor onto the semiconductor substrate and treating a surface of the preliminary cobalt layer under an atmosphere of a hydrogen-containing gas to remove impurities contained in the preliminary cobalt layer. Compositions of cobalt layers are also provided. Further provided are semiconductor devices comprising cobalt layers provided herein.

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