Methods of forming capacitors including reducing exposed...

Details Methods of forming capacitors including reducing exposed... Methods of forming capacitors including reducing exposed...

2005-02-01

2005-02-01

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S240000, C438S238000, C438S241000, C438S381000, C438S003000, C438S776000, C438S393000

Reexamination Certificate

active

06849517

ABSTRACT:
A method of fabricating an integrated circuit device having capacitors is provided. The capacitors can include a first electrode, a dielectric layer and a second electrode. An interlayer insulating layer is formed on the capacitor. The interlayer insulating layer is patterned to form a metal contact hole that exposes a region of the second electrode. The exposed region of the second electrode is reduced to remove excessive oxygen atoms that can exist in the second electrode.

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