Methods of forming capacitors for semiconductor memory...

Details Methods of forming capacitors for semiconductor memory... Methods of forming capacitors for semiconductor memory...

2007-10-02

2008-12-02

Chen, Jack (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S306000

Reexamination Certificate

active

07459745

ABSTRACT:
Methods of forming capacitors include forming a first mold layer and a second mold layer on a substrate, forming storage electrodes through the mold layers, the storage electrodes arranged in rows extending in a first direction and spaced apart from adjacent storage electrodes along the first direction by a first interval. The storage electrodes are spaced apart from adjacent storage electrodes along a second direction oblique to the first direction by a second interval smaller than the first interval. First and second sacrificial layers are formed on the storage electrodes layer partially filling up a gap between adjacent storage electrodes along the first direction and filling up a gap between the adjacent storage electrodes along the second direction. Sacrificial spacers may be formed on sidewalls of the storage electrodes by etching the sacrificial layers. The second mold layer may be etched using the sacrificial spacers as etching masks to define a plurality of stabilizing structures. Resulting devices are also disclosed.

REFERENCES:
patent: 6486025 (2002-11-01), Liu et al.
patent: 2006/0046382 (2006-03-01), Yoon et al.
patent: 2003-142605 (2003-05-01), None
patent: 1020030075907 (2002-09-01), None
patent: 1020030093817 (2003-12-01), None

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