Methods of forming capacitors

Details Methods of forming capacitors Methods of forming capacitors

2008-05-02

2009-11-17

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S250000, C438S253000, C438S381000, C257S068000, C257S071000, C257S296000

Reexamination Certificate

active

07618874

ABSTRACT:
A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield comprises a nitride. Etching is conducted within the opening through the nitride-comprising shield. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location. A capacitor dielectric and a second capacitor electrode are formed operatively adjacent the first capacitor electrode. Other aspects and implementations are contemplated.

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