Methods of forming capacitors

Details Methods of forming capacitors Methods of forming capacitors

2006-05-23

2006-05-23

Schillinger, Laura M. (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S675000

Reexamination Certificate

active

07049231

ABSTRACT:
In but one aspect of the invention, a method of depositing polysilicon comprises providing a substrate within a chemical vapor deposition reactor, with the substrate having an exposed substantially crystalline region and an exposed substantially amorphous region. A gaseous precursor comprising silicon is fed to the chemical vapor deposition reactor under conditions effective to substantially selectively deposit polysilicon on the crystalline region and not the amorphous region. In another aspect a method of fabricating a field effect transistor on a substrate comprises forming a gate dielectric layer and a gate over semiconductive material. Doped source/drain regions are formed within semiconductive material laterally proximate the gate. Substantially amorphous insulating material is formed over and laterally proximate the gate. The substrate is provided within a chemical vapor deposition reactor. A gaseous precursor comprising silicon is fed to the chemical vapor deposition reactor under conditions effective to substantially selectively deposit polysilicon on the source/drain regions and not on substantially amorphous material, and forming elevated source/drains on the doped source/drain regions. In but another aspect, a method of forming a contact to a substrate is disclosed. A contact opening is etched through amorphous insulating material over a node location ultimately comprising an outwardly exposed substantially crystalline surface. Within a chemical vapor deposition reactor, a gaseous precursor comprising silicon is provided under conditions effective to substantially selectively deposit polysilicon on the outwardly exposed crystalline node location surface and not on the insulating material. Capacitor forming methods are also disclosed.

REFERENCES:
patent: 4497683 (1985-02-01), Celler et al.
patent: 4722912 (1988-02-01), Flatley et al.
patent: 4901128 (1990-02-01), Sunami et al.
patent: 4948755 (1990-08-01), Mo
patent: 4963506 (1990-10-01), Liaw et al.
patent: 4966868 (1990-10-01), Murali et al.
patent: 5006911 (1991-04-01), Sivan
patent: 5037775 (1991-08-01), Reisman
patent: 5080933 (1992-01-01), Grupen-Shemansky et al.
patent: 5110757 (1992-05-01), Arst et al.
patent: 5118639 (1992-06-01), Roth et al.
patent: 5124276 (1992-06-01), Samata et al.
patent: 5227651 (1993-07-01), Kim et al.
patent: 5364815 (1994-11-01), Osada
patent: 5441012 (1995-08-01), Aketagawa et al.
patent: 5607878 (1997-03-01), Otsuka et al.
patent: 5646073 (1997-07-01), Grider et al.
patent: 5663098 (1997-09-01), Creighton et al.
patent: 5798278 (1998-08-01), Chan et al.
patent: 5811344 (1998-09-01), Tu et al.
patent: 5818100 (1998-10-01), Grider et al.
patent: 6013575 (2000-01-01), Itoh
patent: 6017823 (2000-01-01), Shishiguchi et al.
patent: 6069036 (2000-05-01), Kim
patent: 6159852 (2000-12-01), Nuttall et al.
patent: 6218288 (2001-04-01), Li et al.
patent: 6387716 (2002-05-01), Nuttall et al.
patent: 6417015 (2002-07-01), Nuttall et al.
patent: 6458699 (2002-10-01), Nuttall et al.
patent: 6509239 (2003-01-01), Nuttall et al.
patent: 6790737 (2004-09-01), Schneegans et al.
patent: 6797558 (2004-09-01), Nuttall et al.
patent: 6967154 (2005-11-01), Meng et al.
patent: 2002/0048911 (2002-04-01), Nuttall et al.
patent: 2004/0224485 (2004-11-01), Nuttall et al.
Wolf, Stanley, “Silicon Processing for the VLSI Era”, vol. 1: Processing Technology, pp. 183.
Wolf, Stanley, “Silicon Processing for the VLSI Era”, vol. 2: Process Integration, pp. 45.
Violette, Katherine et al., “Low Temperature Selective Silicon Epitaxy by Ultra High Vacuum Rapid Thermal Chemical Vapor Deposition Using SI2H6, H2and Cl2”, Appl. Phys. Lett. 68, Jan 1, 1996, pp. 66-68.

Affiliated with

Also associated with

Rating

Methods of forming capacitors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming capacitors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming capacitors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3573267