Methods of forming capacitor constructions

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S239000

Reexamination Certificate

active

07439564

ABSTRACT:
The invention includes constructions having two dielectric layers over a conductively-doped semiconductive material. One of the dielectric layers contains aluminum oxide, and the other contains a metal oxide other than aluminum oxide (such metal oxide can be, for example, one or more of hafnium oxide, tantalum oxide, titanium oxide and zirconium oxide). The layer containing aluminum oxide is between the layer containing metal oxide and the conductively-doped semiconductive material. The invention includes capacitor devices having one electrode containing conductively-doped silicon and another electrode containing one or more metals and/or metal compounds. At least two dielectric layers are formed between the two capacitor electrodes, with one of the dielectric layers containing aluminum oxide and the other containing a metal oxide other than aluminum oxide. The invention also includes methods of forming capacitor constructions.

REFERENCES:
patent: 6831315 (2004-12-01), Raaijmakers et al.
patent: 2002/0115252 (2002-08-01), Haukka et al.
patent: 2002/0195683 (2002-12-01), Kim et al.
patent: 2004/0141390 (2004-07-01), Won et al.
patent: 2004/0233610 (2004-11-01), Basceri et al.
patent: 2004/0238872 (2004-12-01), Lee et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Methods of forming capacitor constructions does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming capacitor constructions, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming capacitor constructions will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4014414

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.