Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-05
2008-10-21
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S239000
Reexamination Certificate
active
07439564
ABSTRACT:
The invention includes constructions having two dielectric layers over a conductively-doped semiconductive material. One of the dielectric layers contains aluminum oxide, and the other contains a metal oxide other than aluminum oxide (such metal oxide can be, for example, one or more of hafnium oxide, tantalum oxide, titanium oxide and zirconium oxide). The layer containing aluminum oxide is between the layer containing metal oxide and the conductively-doped semiconductive material. The invention includes capacitor devices having one electrode containing conductively-doped silicon and another electrode containing one or more metals and/or metal compounds. At least two dielectric layers are formed between the two capacitor electrodes, with one of the dielectric layers containing aluminum oxide and the other containing a metal oxide other than aluminum oxide. The invention also includes methods of forming capacitor constructions.
REFERENCES:
patent: 6831315 (2004-12-01), Raaijmakers et al.
patent: 2002/0115252 (2002-08-01), Haukka et al.
patent: 2002/0195683 (2002-12-01), Kim et al.
patent: 2004/0141390 (2004-07-01), Won et al.
patent: 2004/0233610 (2004-11-01), Basceri et al.
patent: 2004/0238872 (2004-12-01), Lee et al.
Bhat Vishwanath
Gealy F. Daniel
Srividya Cancheepuram V.
Micro)n Technology, Inc.
Vu David
Wells St. John P.S.
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