Methods of forming boron carbo-nitride layers for integrated...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S763000, C257S758000, C257SE21547

Reexamination Certificate

active

07144803

ABSTRACT:
The present invention includes methods for forming a boron carbo-nitride layer. Additional embodiments include thermal chemical vapor deposition methods for forming a boron carbo-nitride layer. Also integrated circuit devices with a boron carbo-nitride layer are disclosed.

REFERENCES:
patent: 4868093 (1989-09-01), Levy
patent: 5895938 (1999-04-01), Watanabe et al.
patent: 6288448 (2001-09-01), Pramanick
patent: 6352921 (2002-03-01), Han et al.
patent: 6424044 (2002-07-01), Han et al.
patent: 6500771 (2002-12-01), Vassiliev et al.
Ekerdt et al., Design, growth and Properties of Boron Carbonitride Insulating diffusion Barriers for Nanosized Electronic Devices.
Kosinova et al., Chemical Composition of Boron Carbonitride Films Grown by Plasma-Enhanced Chemical Vapor Deposition from Trimethylamine borane, 2003, Inorganic Materials, pp. 366-373.
Fayolle et al.; Integration of Cu/SIOC in Dual Damascene interconnect for 0.1μm technology using a new SiC material as dielectric barrier 2002IEEE International Interconnect Technology Conference, Burlingame, CA 39-41 (2002).
Gelatos et al.; “The Properties of a Plasma Deposited Candidate Insulator for Future Multilevel Interconnects Technology”Mat. Res. Soc. Symp.250 347-354 (1992).
Levy et al. “Evaluation of LPCVD Boron Nitride as a Low Dielectric Constant Material”Mat. Res. Soc. Symp.427 469-478 (1996).
Martin et al.; “Inegration of SiCN as a Low κ Etch Stop and Cu Passivation in a High Performance Cu/Low κ Interconnect ”2002IEEE International Interconnect Technology Conference, Burlingame, CA 4244 (2002).
Nguyen et al.; “Plasma-Assisted Chemical Vapor Deposition and Characterization of Boron Nitride Films”J. Electrochem. Soc., 141:6 1633-1638 (1994).
Sugino et al.; “Dielectric constant of boron carbon nitride films synthesized by plasma-assisted chemical-vapor deposition”Applied Physics Letters80:4 649-651 (2002).

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