Fishing – trapping – and vermin destroying
Patent
1996-09-11
1998-02-24
Niebling, John
Fishing, trapping, and vermin destroying
437162, 437186, 148DIG10, 148DIG11, H01L 21265
Patent
active
057211477
ABSTRACT:
Methods of forming bipolar junction transistors include the steps of forming a first insulating layer on a face of a semiconductor substrate containing a collector region of first conductivity type therein and then forming an opening in the first insulating layer to expose the collector region at the face. An extrinsic base region contact layer of second conductivity type is then formed on the first insulating layer and in the opening and then an extrinsic base region of second conductivity type is formed in the collector region, at the opening in the first insulating layer. Next, a second insulating layer is formed on the extrinsic base region contact layer and first insulating layer, using the first insulating layer as a mask to prevent contact between the second insulating layer and the collector region at the face. To complete the transistor, an intrinsic base region of second conductivity type is then formed in the collector region and then an emitter region of first conductivity type is formed in the intrinsic base region.
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Niebling John
Pham Long
Samsung Electronics Co,. Ltd.
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