Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized
Reexamination Certificate
2007-04-10
2007-04-10
Chen, Bret (Department: 1762)
Coating processes
Coating by vapor, gas, or smoke
Mixture of vapors or gases utilized
C427S255391, C427S079000, C427S096800
Reexamination Certificate
active
10372727
ABSTRACT:
A thin film is formed using an atomic layer deposition process, by introducing a first reacting material including tantalum precursors and titanium precursors onto a substrate. A portion of the first reacting material is chemisorbed onto the substrate. Then, a second reacting material including oxygen is introduced onto the substrate. A portion of the second reacting material is also chemisorbed onto the substrate, to form an atomic layer of a solid material on the substrate. The solid material may be used as a dielectric layer of the capacitor and/or a gate dielectric layer of the transistor.
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Chung Jeong-Hee
Park In-Sung
Yeo Jae-Hyun
Chen Bret
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
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