Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-08-16
2005-08-16
Baumeister, Bradley (Department: 2825)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S785000, C438S786000, C438S787000, C438S765000, C438S769000, C438S771000, C438S770000
Reexamination Certificate
active
06930062
ABSTRACT:
A method of forming an oxide layer on a semiconductor substrate includes thermally oxidizing a surface of the substrate to form an oxide layer on the substrate, and then exposing the oxide layer to an ambient including predominantly oxygen radicals to thereby thicken the oxide layer. Related methods of fabricating a recessed gate transistor are also discussed.
REFERENCES:
patent: 5383993 (1995-01-01), Katada et al.
patent: 6287988 (2001-09-01), Nagamine et al.
patent: 6500735 (2002-12-01), Usuda
patent: 6551947 (2003-04-01), Ono et al.
patent: 6798038 (2004-09-01), Sato et al.
patent: 2003/0011019 (2003-01-01), Inoue
patent: 2003/0040196 (2003-02-01), Lim et al.
patent: 2003/0124793 (2003-07-01), Tsuji
patent: 2004/0104426 (2004-06-01), Forbes et al.
patent: 2004/0145015 (2004-07-01), Mo et al.
patent: 2002 0081902 (2002-10-01), None
Notice to File Response, Korean Application No. 10-2004-0036088, mailed Dec. 15, 2004.
Notice to File Response, Korean Application No. 10-2004-0036088, mailed Dec. 15, 2004.
Hong Sug-Hun
Hyun Sang-Jin
Jeon Taek-Soo
Koo Bon-Young
Ryu Jeong-do
Baumeister Bradley
Samsung Electronics Co., Inc.
Yevsikov Victor V
LandOfFree
Methods of forming an oxide layer in a transistor having a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods of forming an oxide layer in a transistor having a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming an oxide layer in a transistor having a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3519605