Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-03-14
2006-03-14
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S299000, C438S301000, C438S305000
Reexamination Certificate
active
07012024
ABSTRACT:
Methods of forming a transistor having integrated metal silicide transistor gate electrode on a semiconductor assembly are described. The transistor gate is partially fabricated by reacting the metal with epitaxial silicon while residing in a trench to form metal silicide. A transistor gate isolation capping layer is formed in the trench and on the metal silicide. Optional trench spacers can be added to reduce the critical dimension restraints of a given fabrication process and thus form a transistor having smaller feature sizes than the critical dimension.
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Ghyka Alexander
Paul David J.
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