Methods of forming a pattern for a semiconductor device

Details Methods of forming a pattern for a semiconductor device Methods of forming a pattern for a semiconductor device

2007-06-12

2007-06-12

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

C438S690000, C216S037000, C216S039000

Reexamination Certificate

active

11021072

ABSTRACT:
Methods of forming a pattern for a semiconductor device are disclosed, wherein a critical dimension (CD) of a pattern can be accurately controlled and, thus, finer critical dimension can be realized. An illustrated example method comprises: forming an etching target layer on a semiconductor substrate; forming a photoresist pattern on the etching target layer; forming polymer spacers on side surfaces of the photoresist pattern to improve side-surface roughness of the photoresist pattern; and etching the etching target layer using the photoresist pattern and the polymer spacers as a mask to form a pattern.

REFERENCES:
patent: 6483146 (2002-11-01), Lee et al.
patent: 6562696 (2003-05-01), Hsu et al.
patent: 2004/0082177 (2004-04-01), Lee
patent: 10-2000-0039797 (2000-07-01), None
patent: 10-2002-0013708 (2002-02-01), None
S. Rossnagel, Handbook of Plasma Processing Technology, Noyes Pulblications, (1990), pp. 207, 198,221 and 227.
S. Wolf, Silicon processing for the VLSI Era, vol. 1, Lattice press (1986) pp. 418-419.

Affiliated with

Also associated with

Rating

Methods of forming a pattern for a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming a pattern for a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming a pattern for a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3819233