Methods of forming a pattern and methods of manufacturing a...

Details Methods of forming a pattern and methods of manufacturing a... Methods of forming a pattern and methods of manufacturing a...

2011-07-26

2011-07-26

Norton, Nadine G (Department: 1713)

Etching a substrate: processes

Gas phase etching of substrate

C216S039000, C216S083000, C438S381000, C438S689000

Reexamination Certificate

active

07985347

ABSTRACT:
In a method of forming a pattern and a method of forming a capacitor, an oxide layer pattern having an opening is formed on a substrate. A conductive layer is formed on the oxide layer pattern and the bottom and sidewalls of the opening. A buffer layer pattern is formed in the opening having the conductive layer, the buffer layer pattern including a siloxane polymer. The conductive layer on the oxide layer pattern is selectively removed using the buffer layer pattern as an etching mask. A conductive pattern having a cylindrical shape can be formed on the substrate. The method of forming a pattern may simplify manufacturing processes for a capacitor and a semiconductor device, and may improve their efficiencies.

REFERENCES:
patent: 2007/0026625 (2007-02-01), Chung et al.
patent: 10-2006-0007681 (2006-01-01), None
patent: 10-0597599 (2006-06-01), None
patent: 10-2006-0074978 (2006-07-01), None
Siloxanes—Consumption, Toxicity and Alternatives. Environmental Project No. 1031. Danish Environmental Protection Agency. Sep. 2005.
Yang, Chang-Chung; Chen, Wen-Chang. The structurea dn properties of hydrogen silsesquioxane films produced by thermal curing. The Royal Society of Chemistry. Feb 22, 2002.

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