Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2008-07-31
2010-10-12
Chen, Jack (Department: 2893)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S240000, C438S393000, C257SE21008
Reexamination Certificate
active
07811834
ABSTRACT:
A method of forming a ferroelectric layer is provided. A metal-organic source gas is provided into a chamber into which an oxidation gas is provided for a first time period to form ferroelectric grains on a substrate. A ferroelectric layer is formed by performing at least twice a step of providing a metal-organic source gas into the chamber during the first time period using a pulse method to grow the ferroelectric grains.
REFERENCES:
patent: 7485189 (2009-02-01), Satake et al.
patent: 2006/0172485 (2006-08-01), Vaartstra
patent: 2006/0269667 (2006-11-01), Ma et al.
patent: 1020060003895 (2006-01-01), None
Heo Jang-Eun
Im Dong-Hyun
Kim Ik-Soo
Lee Choong-Man
Lee Sung-Ju
Chen Jack
Myers Bigel & Sibley Sajovec, PA
Samsung Electronics Co,. Ltd.
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