Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-07-03
2007-07-03
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S655000, C438S660000, C438S664000, C438S682000, C438S683000, C438S762000, C438S765000, C257SE21165, C257SE21199
Reexamination Certificate
active
11044884
ABSTRACT:
A metal salicide layer is formed by sequentially depositing a physical vapor deposition (PVD) metal layer and a chemical vapor deposition (CVD) metal layer on a semiconductor device having an exposed silicon surface so as to form a double metal layer. The semiconductor device is annealed to react the double metal layer with the silicon surface. At least a portion of the double layer that has not reacted with the silicon surface is stripped. The semiconductor device is annealed after stripping at least the portion of the double metal layer.
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Notice to Submit Response for Korean Application No. 10-2004-0014958, dated Aug. 22, 2005.
Cheong Seong-hwee
Choi Gil-heyun
Jung Sug-woo
Kim Hyun-su
Sohn Woong-hee
Estrada Michelle
Myers Bigel & Sibley Sajovec, PA
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