Methods of forming a double metal salicide layer and methods...

Details Methods of forming a double metal salicide layer and methods... Methods of forming a double metal salicide layer and methods...

2007-07-03

2007-07-03

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S655000, C438S660000, C438S664000, C438S682000, C438S683000, C438S762000, C438S765000, C257SE21165, C257SE21199

Reexamination Certificate

active

11044884

ABSTRACT:
A metal salicide layer is formed by sequentially depositing a physical vapor deposition (PVD) metal layer and a chemical vapor deposition (CVD) metal layer on a semiconductor device having an exposed silicon surface so as to form a double metal layer. The semiconductor device is annealed to react the double metal layer with the silicon surface. At least a portion of the double layer that has not reacted with the silicon surface is stripped. The semiconductor device is annealed after stripping at least the portion of the double metal layer.

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