Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-12-13
2005-12-13
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S672000, C438S637000
Reexamination Certificate
active
06974774
ABSTRACT:
Methods to form contact openings and allow the formation of self-aligned contacts for use in the manufacture of semiconductor devices are described. During formation of a multi-layered resist, a hard mask material is introduced beneath an anti-reflective coating to be used as an etch stop layer. The multi-layered resist is patterned and etched, to transfer the desired contact pattern to a substrate material, such as a silicon substrate, to form contact openings therein. The contact openings provide for the formation of self-aligned contacts therein.
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patent: 6174451 (2001-01-01), Hung et al.
patent: 6337285 (2002-01-01), Ko
patent: 6458685 (2002-10-01), Ko et al.
patent: 6803318 (2004-10-01), Qiao et al.
Micro)n Technology, Inc.
Nhu David
Paul David J.
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