Methods of forming a contact hole in a semiconductor device

Details Methods of forming a contact hole in a semiconductor device Methods of forming a contact hole in a semiconductor device

2006-09-12

2006-09-12

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S713000

Reexamination Certificate

active

07105435

ABSTRACT:
Methods for forming a contact hole in a semiconductor device are disclosed. A disclosed method is capable of preventing voids from being formed in a contact hole or a via hole. In particular, when a metal insulation film or an interlayer insulation film is selectively etched to form a contact hole or a via hole, a top edge of the contact hole or the via hole is rounded by using a plasma having spiral movement.

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