Methods of forming a conductive transparent oxide film layer...

Details Methods of forming a conductive transparent oxide film layer... Methods of forming a conductive transparent oxide film layer...

2010-03-30

2011-10-25

Sarkar, Asok (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C136S256000, C136S260000, C136S264000, C257SE21159, C438S085000, C438S098000, C438S608000

Reexamination Certificate

active

08043954

ABSTRACT:
Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate from a target (e.g., including cadmium stannate) in a sputtering atmosphere comprising cadmium. The transparent conductive oxide layer can be sputtered at a sputtering temperature of about 100° C. to about 600° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device.

REFERENCES:
patent: 3811953 (1974-05-01), Nozik
patent: 4439267 (1984-03-01), Jackson, Jr.
patent: 4650539 (1987-03-01), Irvine et al.
patent: 4812586 (1989-03-01), Mullin et al.
patent: 5123995 (1992-06-01), Stinespring et al.
patent: 5261968 (1993-11-01), Jordan
patent: 5304499 (1994-04-01), Bonnet et al.
patent: 5922142 (1999-07-01), Wu et al.
patent: 6137048 (2000-10-01), Wu et al.
patent: 6169246 (2001-01-01), Wu et al.
patent: 6221495 (2001-04-01), Wu et al.
patent: 6261694 (2001-07-01), Iacovangelo
patent: 6365016 (2002-04-01), Iacovangelo
patent: 6420032 (2002-07-01), Iacovangelo
patent: 6426125 (2002-07-01), Yang
patent: 6517687 (2003-02-01), Iacovangelo
patent: 6737121 (2004-05-01), Yang
patent: 2005/0009228 (2005-01-01), Wu et al.
patent: 2005/0224111 (2005-10-01), Cunningham et al.
patent: 2008/0096376 (2008-04-01), Li et al.
patent: 2009/0166616 (2009-07-01), Uchiyama
patent: 2009/0194165 (2009-08-01), Murphy et al.
patent: 2009/0272437 (2009-11-01), Roberts et al.
patent: 2010/0032008 (2010-02-01), Adekore
patent: 0040939 (1985-01-01), None
patent: 8606071 (1986-10-01), None
Coutts et al., “High-Performance, Transparent Conducting Oxides Based on Cadmium Stannate”, Journal of Electronic Materials, vol. 25(6), p. 935-943 (1996).
Llyod, “Properties of Cadmium Stannate Films Prepared by R. F. Sputtering From Powder Targets.”, Thin Solid Films, vol. 41, p. 113-120 (1977).
English Abstract JP 4318940, Published Nov. 10, 1992.
English Abstract JP 1198035, Published Aug. 9, 1989.
English Abstract JP 4287312, Published Oct. 12, 1992.
English Abstract JP 2039441, Published Feb. 8, 1990.
English Abstract JP 62214626, Published Sep. 21, 1987.
English Abstract JP 7335566, Published Dec. 22, 1995.
English Abstract JP 4345139, Published Dec. 1, 1992.
English Abstract JP 4193793, Published Jul. 13, 1992.
English Abstract JP 2235348, Published Aug. 18, 1990.
English Abstract JP 2212399, Published Aug. 23, 1990.
English Abstract JP 2181938, Published Jul. 16, 1990.
English Abstract JP 2142145, Published May 31, 1990.
English Abstract JP 2027742, Published Jan. 30, 1990.
English Abstract JP 63232315, Published Sep. 28, 1988.
English Abstract JP 62275100, Published Nov. 30, 1987.
English Abstract JP 62274068, Published Nov. 28, 1987.
English Abstract JP 57108850, Published Jul. 7, 1982.
English Abstract JP 7278795, Published Oct. 24, 1995.
English Abstract KR 820001343, Published Jul. 28, 1982.
Haacke G et al: “Sputter deposition and characterization of Cd2SnO4 films”, Thin Solid Films, Elsevier-Sequoia S.A. Lausanne, CH,vol. 55, No. 1, Nov. 15, 1979, pp. 67-81, XP025698583.
Romeo N et al: “Comparison of different conducting oxides as substrates for CdS/CdTe thin film solar cells”, Thin Solid Films, Elsevier-Sequoia S.A. Lausanne, CH, vol. 431-432, May 1, 2003, pp. 364-368, XP004428668.
EP Search Report issued in connection with corresponding EP Patent Application No. 11160307.2 filed on Mar. 29, 2011.

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