Methods of forming a conductive transparent oxide film layer...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C136S256000, C136S260000, C136S264000, C257SE21159, C438S085000, C438S098000, C438S608000

Reexamination Certificate

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08043955

ABSTRACT:
Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer (e.g., including cadmium stannate) on a substrate from a target in a sputtering atmosphere comprising cadmium. The transparent conductive oxide layer can be sputtered at a sputtering temperature greater of about 100° C. to about 600° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device.

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English Abstract JP 2007278795, Published Oct. 25, 2007.
English Abstract KR 820001343, Published Jul. 28, 1982.

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