Methods of forming a conductive structure in an integrated...

Details Methods of forming a conductive structure in an integrated... Methods of forming a conductive structure in an integrated...

2007-10-09

2007-10-09

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S643000, C438S644000, C257SE27001

Reexamination Certificate

active

10796437

ABSTRACT:
A conductive structure is formed in an integrated circuit device by forming a lower conductive pattern on a substrate. A barrier metal layer is formed on the lower conductive pattern. The barrier metal layer is flushed with a gas that includes a halogen group gas and an upper conductive layer is formed on the barrier metal layer.

REFERENCES:
patent: 6838772 (2005-01-01), Saitoh et al.
patent: 2002/0072227 (2002-06-01), Russell et al.
patent: 08-078520 (1996-03-01), None
patent: 1999-6108 (1999-01-01), None
patent: 2002-83573 (2002-11-01), None
Notice to File a Response/Amendment to the Examination Report for Korean application No. 10-2003-0035657 mailed on May 4, 2005.

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