Methods of forming a conductive contact through a dielectric

Details Methods of forming a conductive contact through a dielectric Methods of forming a conductive contact through a dielectric

2007-08-21

2007-08-21

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21585

Reexamination Certificate

active

11211853

ABSTRACT:
A dielectric is formed over a node location on a semiconductor substrate. The dielectric comprises an insulative material over the node location, an insulative polish stop layer over the insulative material, and an insulator layer over the insulative polish stop layer. A contact opening is formed into the insulator layer, the insulative polish stop layer and the insulative material to proximate the node location. A conductive material is deposited over the insulator layer and to within the contact opening. The conductive material and the insulator layer are polished to at least a portion of the insulative polish stop layer. In one implementation and prior to depositing the conductive material, at least a portion of the contact opening is widened with an etching chemistry that is selective to widen it within the insulative material to a degree greater than any widening of the contact opening within the insulative polish stop layer.

REFERENCES:
patent: 5328553 (1994-07-01), Poon
patent: 5439848 (1995-08-01), Hsu et al.
patent: 5516710 (1996-05-01), Boyd et al.
patent: 5518948 (1996-05-01), Walker
patent: 5891799 (1999-04-01), Tsui
patent: 6037246 (2000-03-01), Bhat et al.
patent: 6143648 (2000-11-01), Rodriguez et al.
patent: 6245489 (2001-06-01), Baklanov et al.
patent: 6245663 (2001-06-01), Zhao et al.
patent: 6294314 (2001-09-01), Liao
patent: 6979641 (2005-12-01), Hermes
patent: 2005/0079706 (2005-04-01), Kumar et al.

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