Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Patent
1995-06-06
1997-06-03
Chaudhari, Chandra
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
438571, 438572, 438523, 438931, H01L 21266
Patent
active
056354126
ABSTRACT:
Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices are obtained by forming an amorphous silicon carbide termination region in a monocrystalline silicon carbide substrate, at a face thereof, adjacent and surrounding a silicon carbide device. The amorphous termination region is preferably formed by implanting electrically inactive ions, such as argon, into the substrate face at sufficient energy and dose to amorphize the substrate face. The device contact or contacts act as an implantation mask to provide a self-aligned termination region for the device. The terminated devices may exhibit voltage breakdown resistance which approaches the ideal value for silicon carbide.
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Shimamoto et al., Improvement of Breakdown Voltage Characteristics of GaAs Junction by Damage-Creation of Ion-Implantation, Institute of Physics Conference Series, No. 120, Chapter 4, pp. 199-202, 1992.
Bhatnagar et al., Edge Terminations of SiC High Voltage Schottky Rectifiers, International Symposium on Power Semiconductor Devices, 1993 Proceedings, Abstract 4.2, pp. 89-94, 1993.
Alok Dev
Baliga Bantval J.
Chaudhari Chandra
North Carolina State University
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