Methods of fabricating transistors having buried p-type...

Details Methods of fabricating transistors having buried p-type... Methods of fabricating transistors having buried p-type...

2007-11-20

2007-11-20

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S169000, C438S172000, C438S174000, C438S192000, C438S194000, C257S279000, C257S280000, C257S287000, C257S288000, C257SE21451

Reexamination Certificate

active

11142551

ABSTRACT:
The present invention provides a unit cell of a metal-semiconductor field-effect transistor (MESFET). The unit cell of the MESFET includes a source, a drain and a gate. The gate is disposed between the source and the drain and on an n-type conductivity channel layer. A p-type conductivity region is provided beneath the source and has an end that extends towards the drain. The p-type conductivity region is spaced apart from the n-type conductivity channel region and is electrically coupled to the source.

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