Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-03-29
2011-03-29
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S157000, C438S164000, C257SE21328, C257SE21347
Reexamination Certificate
active
07915102
ABSTRACT:
Methods of fabricating a TFT and an OLED using the same are provided. The method of fabricating a CMOS TFT includes: preparing a substrate having first and second TFT regions; forming a gate electrode on the substrate; forming a gate insulating layer on the entire surface of the substrate including the gate electrode; forming a semiconductor layer on a predetermined region of the gate insulating layer using a mask; exposing the back of the mask using the gate electrode; injecting n-type impurity ions into the semiconductor layers of the first and second TFT regions using the back-exposed mask and forming a channel region and source and drain regions; ashing both sides of the back-exposed mask; injecting low concentration impurity ions into the semiconductor layers of the first and second TFT regions using the ashed mask and forming an LDD region; and injecting p-type impurity ions into the semiconductor layer of the second TFT region and forming source and drain regions.
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Hwang Eui-Hoon
Lee Sang-Gul
Knobbe Martens & Olson Bear LLP.
Landau Matthew C
Samsung Mobile Display Co., Ltd.
Snow Colleen E
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