Methods of fabricating silicon on insulator substrates for...

Details Methods of fabricating silicon on insulator substrates for... Methods of fabricating silicon on insulator substrates for...

2006-02-14

2006-02-14

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C438S409000

Reexamination Certificate

active

06998324

ABSTRACT:
Example methods of fabricating a silicon on insulator substrate are disclosed. One example method may include forming a plurality of trenches on a substrate, forming an insulation layer on the trenches, removing a portion of the insulation layer formed on the trenches to partially expose the substrate, and forming a silicon on insulator film in the substrate via the exposed portions of the substrate.

REFERENCES:
patent: 4643804 (1987-02-01), Lynch et al.
patent: 4982263 (1991-01-01), Spratt et al.
patent: 5217920 (1993-06-01), Mattox et al.
patent: 5767561 (1998-06-01), Frei et al.
patent: 6319333 (2001-11-01), Noble
patent: 6437417 (2002-08-01), Gilton
patent: 6506658 (2003-01-01), D'Arrigo et al.

Affiliated with

Also associated with

Rating

Methods of fabricating silicon on insulator substrates for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of fabricating silicon on insulator substrates for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of fabricating silicon on insulator substrates for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3668104