Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2007-03-12
2008-10-07
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S403000, C438S412000, C438S486000, C438S660000, C257SE27112, C257SE21320, C257SE21545, C257SE21562
Reexamination Certificate
active
07432173
ABSTRACT:
In some methods of fabricating a silicon-on-insulator substrate, a semiconductor substrate is provided that includes a single crystalline structure within at least a defined region thereof. A first insulating film is formed on the defined region of the semiconductor substrate with an opening that exposes a portion of the defined region of the semiconductor substrate having the single crystalline structure. A first non-single crystalline film is formed on the exposed portion of the semiconductor substrate and that at least substantially fills the opening in the first insulating film. A laser beam is generated that heats the first non-single crystalline film to change the first non-single crystalline film into a first single crystalline film having substantially the same single crystalline structure as the defined region of the semiconductor substrate.
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Kang Sung-kwan
Lee Jong-wook
Shin Yu-gyun
Son Yong-Hoon
Estrada Michelle
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
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